vishay tdsr07../ 10../ 13.. document number 83228 rev. 1.2, 07-jul-04 vishay semiconductors www.vishay.com 1 18542 high intensity red low current seven segment display description this series defines a new standard for low current displays. it is a single digit 7-segment led display utilizing allngap technology in color red. the supreme light intensity allows applications under direct sunlight or "black front" designs by using tinted filter glass in front of the display. typical 1500 cd at 1.0 ma is best in class perfor- mance for applications with very limited power supply. the maximum forward current of 10 ma is allowed for an ambient temperature range of - 40 to +85 c with- out current derating. crosstalk between segments is possible at drive cur- rents above 5 ma per segment. therefore it is recom- mend to apply more than 5 ma only under direct sunlight or with tinted filter glass. features 1500 cd typical at 1.0 ma very low power consumption wide viewing angle grey package surface light intensity categorized at i f = 1.0ma applications battery driven instruments telecom devices home appliances instrumentation pos terminals parts table absolute maximum ratings t amb = 25 c, unless otherwise specified tdsr0750/0760 , tdsr1050/1060 , tdsr1350/1360 part color, luminous intensity circuitry tdsr0750 high intensity low current red common anode tdsr0760 high intensity low current red common cathode tdsr1050 high intensity low current red common anode tdsr1060 high intensity low current red common cathode tdsr1350 high intensity low current red common anode tdsr1360 high intensity low current red common cathode parameter test condition symbol value unit reverse voltage per segment v r 5v dc forward current per segment i f 10 ma peak forward current per segment t p 10 s, duty cycle 1/10 i fm 50 ma
www.vishay.com 2 document number 83228 rev. 1.2, 07-jul-04 vishay tdsr07../ 10../ 13.. vishay semiconductors optical and electrical characteristics t amb = 25 c, unless otherwise specified red power dissipation t amb 85c p v 185 mw junction temperature t j 105 c operating temperature range t amb - 40 to + 85 c storage temperature range t stg - 40 to + 85 c soldering temperature t 3 sec, 2mm below seating plane t sd 260 c thermal resistance led junction/ambient r thja 100 k/w parameter test condition symbol min ty p. max unit tdsr0750, tdsr0760 luminous intensity per segment (digit average) i f = 1 ma i v 180 2200 cd dominant wavelength i f = 1 ma d 640 nm peak wavelength i f = 1 ma p 650 nm forward voltage per segment or dp i f = 1 ma v f 1.8 2.4 v reverse voltage per segment or dp v r = 6 v i r 10 a tdsr1050, tdsr1060 luminous intensity per segment (digit average) i f = 1 ma i v 280 3600 cd dominant wavelength i f = 1 ma d 640 nm peak wavelength i f = 1 ma p 650 nm forward voltage per segment or dp i f = 1 ma v f 1.8 2.4 v reverse voltage per segment or dp v r = 6 v i r 10 a tdsr1350, tdsr1360 luminous intensity per segment (digit average) i f = 1 ma i v 280 3600 cd dominant wavelength i f = 1 ma d 640 nm peak wavelength i f = 1 ma p 650 nm forward voltage per segment or dp i f = 1 ma v f 1.8 2.4 v reverse voltage per segment or dp v r = 6 v i r 10 a parameter test condition symbol value unit
vishay tdsr07../ 10../ 13.. document number 83228 rev. 1.2, 07-jul-04 vishay semiconductors www.vishay.com 3 typical characteristics (t amb = 25 c unless otherwise specified) figure 1. power dissipation vs. ambient temperature figure 2. forward current vs. ambient temperature figure 3. rel. luminous intensity vs. angular displacement 0 0 100 200 300 400 500 p - power dissipation ( mw ) v t amb - ambient temperature ( c) 100 18539 185 85 60 80 40 20 0 5 10 15 20 30 i - forward current ( ma ) f 25 0 t amb - ambient temperature ( c) 100 85 60 80 40 20 18540 0.4 0.2 0 0.2 0.4 0.6 95 10082 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 i - relative luminous intensity v rel 1 10 100 1.0 1.5 2.0 2.5 3.0 v f - forward voltag e(v) 95 10878 f i - forward current ( ma ) 0.1 1 10 100 0.1 1 10 100 i f - forward current ( ma ) 16120 i - relative luminous intensity vrel 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t amb - ambient temperature ( c) 16119 i - relative luminous intensity vrel red i f =1ma 0 10 20 3040 5060708090100
www.vishay.com 4 document number 83228 rev. 1.2, 07-jul-04 vishay tdsr07../ 10../ 13.. vishay semiconductors figure 7. rel. luminous intensity vs. ambient temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 560 580 600 620 640 660 680 700 720 - wavelength ( mm ) 18541 i - relative luminous intensity vrel i f =10ma red
vishay tdsr07../ 10../ 13.. document number 83228 rev. 1.2, 07-jul-04 vishay semiconductors www.vishay.com 5 package dimensions in mm 95 11342 a f e g d c b dp 12345 10 9 8 7 6 96 11677 1e 2d 4c 6b 9g 10 f 7a 5dp 3 a(c) 8 a(c)
www.vishay.com 6 document number 83228 rev. 1.2, 07-jul-04 vishay tdsr07../ 10../ 13.. vishay semiconductors package dimensions in mm 95 11343 a f e g d c b dp 1 2 3 4 5 10 9 8 7 6 96 11678 1g 2f 4e 6dp 9b 10 a 7c 5d 3 a(c) 8 a(c)
vishay tdsr07../ 10../ 13.. document number 83228 rev. 1.2, 07-jul-04 vishay semiconductors www.vishay.com 7 package dimensions in mm 95 11344 a f e g d c b dp 12345 10 9 8 7 6 95 10896 1e 2d 4c 6b 9f 10 g 7a 5dp 3 a(c) 8 a(c)
www.vishay.com 8 document number 83228 rev. 1.2, 07-jul-04 vishay tdsr07../ 10../ 13.. vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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